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KBE00G003M-D411 - NAND 512Mb*2 Mobile SDRAM 256Mb*2

KBE00G003M-D411_1259780.PDF Datasheet
 Full text search : NAND 512Mb*2 Mobile SDRAM 256Mb*2

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KBE00F005A-D411 512Mb NAND*2 256Mb Mobile SDRAM*2
 Samsung Electronic
KBE00G003M-D411 KBE00G003M NAND 512Mb*2 Mobile SDRAM 256Mb*2
 SAMSUNG[Samsung semiconductor]
KBE00S003M-D411 KBE00S003M 1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
 SAMSUNG[Samsung semiconductor]
K521F12ACD-B060 1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
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V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
 Electronic Theatre Controls, Inc.
K4M28163LH K4M28163LH-BF K4M28163LH-BF1H K4M28163L Mobile SDRAM
 SAMSUNG SEMICONDUCTOR CO. LTD.
HY5MS7B2BLF Mobile DDR SDRAM 512M
 Hynix
H55S1G32MFP-60 H55S1G32MFP-75 H55S1G32MFP-A3 H55S1 1Gb (32Mx32bit) Mobile SDRAM
 Hynix Semiconductor
EMD56324P EMD56324P-75 256M: 8M x 32 Mobile DDR SDRAM
 http://
K4X51163PG-FGC6 K4X51163PG-FGC8 32Mx16 Mobile DDR SDRAM
 Samsung Electronics
EMD56324P-60 EMD56324P-75 EMD56324P 256M: 8M x 32 Mobile DDR SDRAM
 Emerging Memory & Logic Solutions Inc
K4X56163P-L K4X56163PI-LFE_GC3 K4X56163PI-LFE_GC6 16Mx16 Mobile DDR SDRAM
 Samsung semiconductor
 
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KBE00G003M-D411 参数比较 KBE00G003M-D411 output data KBE00G003M-D411 pressure sensor KBE00G003M-D411 alldatasheet KBE00G003M-D411 Sipat
 

 

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